? 2006 ixys all rights reserved ds99419e(01/06) polarhv tm hiperfet power mosfet isoplus247 tm (electrically isolated back surface) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 800 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 1000 a r ds(on) v gs = 10 v, i d = i t 290 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c20a i dm t c = 25 c, pulse width limited by t jm 70 a i ar t c = 25 c16a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c f c mounting force 20..120/4.5..26 n/lb v isol 50/60 hz, rms t = 1 minute 2500 v~ weight 5g v dss = 800 v i d25 =20 a r ds(on) 290 m ? ? ? ? ? t rr 250 ns ixfr 32n80p features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l low drain to tab capacitance(<30pf) l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l rated for unclamped inductive load switching (uis) l fast intrinsic rectifier applications l dc-dc converters l battery chargers l switched-mode and resonant-mode power supplies l dc choppers l ac motor control advantages l easy assembly l space savings l high power density isoplus247 (ixfr) g = gate d = drain s = source (isolated tab) e153432 n-channel enhancement mode avalanche rated fast intrinsic diode
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 32n80p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , pulse test 23 38 s c iss 8800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 700 pf c rss 26 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d =0.5 i d25 24 ns t d(off) r g = 2 ? (external) 85 ns t f 24 ns q g(on) 150 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 40 nc q gd 44 nc r thjc 0.42 c/w r thcs 0.15 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 32 a i sm repetitive 70 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s 250 ns q rm v r = 100v 0.8 c i rm 6.0 a isoplus 247 outline note: test current i t = 16a ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfr 32n80p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 4v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 03691215182124 v d s - volts i d - amperes v gs = 10v 6v 4v 5v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 012 34567 8910 v d s - volts i d - amperes v gs = 10v 6v 4v 5v fig. 4. r ds(on ) norm alize d to i d = 16a value vs. junction tem perature 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 32a i d = 16a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 16a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 10203040506070 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v fig. 6. drain current vs . case tem perature 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 32n80p fig. 11. capacitance 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rs f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = 400v i d = 16a i g = 10ma fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 45 33.5 44.5 5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source curre nt vs . source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. m axim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
? 2006 ixys all rights reserved ixfr 32n80p fig. 13. m axim um transient therm al resistance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
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